Heteroepitaxy on silicon

Conference · Thu Dec 31 23:00:00 EST 1987

OSTI ID:7142398

Choi, H K ^[1]; Hull, R ^[2]; Ishiwara, H ^[3]; Nemanich, R J ^[4]

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1. Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
2. AT and T Bell Labs., Murray Hill, NJ (USA)
3. Tokyo Inst. of Tech., Yokohama (Japan)
4. North Carolina State Univ., Raleigh, NC (USA)

This volume contains most of the papers presented at a symposium which highlighted new developments in fundamental understanding, materials growth, characterization, and device applications of heteroepitaxy on Si. Thirteen scientists give papers on topics, ranging from fundamentals of heteroepitaxy, materials growth, characterization, and device issues of III-V compounds, GeSi, SiC, metals, and insulators on Si.

• OSTI ID: 7142398
• Report Number(s): CONF-8804299--; ISBN: 0-931837-86-3
• Country of Publication: United States
• Language: English

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CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELECTRONIC STRUCTURE
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
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