Semiconducting and insulating materials 1996: Proceedings
Conference
·
OSTI ID:541061
This conference dealt with all the material aspects involved in the growth, characterization, theory and applications of the III-V materials which can be made insulating by special elaboration procedures or post-growth treatments. For the first time, it broadened its scope to include new promising compounds such as SiGe, GaN and SiC. Papers are divided into the following areas: (1) SI III-V growth and techniques; (2) II-VI, wide gap III-V and amorphous materials; (3) semi-insulating III-V characterizations; (4) IV-IV materials, SiGe, SiC; (5) defects and theory; and (6) devices and microcavities. Separate abstracts were prepared for some papers.
- OSTI ID:
- 541061
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
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