III-V heterostructures for electronic/photonic devices
Conference
·
OSTI ID:7023480
- California Univ., San Diego, La Jolla, CA (USA)
- AT and T Bell Lab., Solid State Technology Center, Breinigsville, PA (US)
- California Univ., Santa Barbara, CA (USA)
The symposium presented in this book covered a wide range of epitaxial techniques important for III-V compound semiconductors. The topics range from fundamental growth kinetics and models to the production issues of safety and multiple wafers per run. In particular, the symposium held a special session on alternative sources, mainly the less-toxic non-hydride group-V sources. These are important for MOCVD and MOMBE. In terms of materials systems, the symposium covers both lattice-matched heterostructures, such as AlGaAs/GaAs and InGaAs/InP, pseudomorphic heterostructures, such as InGaAs/GaAs, and lattice-mismatched heterostructures, such as GaAs/Si, GaAs/InP, InP/GaAs, II-VI/GaAs, etc. In the characterization area, the techniques include RBS, TEM, X-ray, C-V, photoconductivity, Hall measurements, etc. In terms of device applications, the topics include MODFET, MESFET, laser, photodetector, solar cells, and integrated FET and laser, etc.
- OSTI ID:
- 7023480
- Report Number(s):
- CONF-890426--; ISBN: 1-55899-018-6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ionizing radiation hardness of GaAs technologies
Laser-assisted simulation of transient radiation effects in heterostructure components based on A{sup III}B{sup V} semiconductor compounds
Transient radiation effects in AlGaAs/GaAs MODFETs
Conference
·
Mon Nov 30 23:00:00 EST 1987
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:7031567
Laser-assisted simulation of transient radiation effects in heterostructure components based on A{sup III}B{sup V} semiconductor compounds
Journal Article
·
Sun Feb 14 23:00:00 EST 2016
· Semiconductors
·
OSTI ID:22645613
Transient radiation effects in AlGaAs/GaAs MODFETs
Conference
·
Mon Nov 30 23:00:00 EST 1987
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:7202007
Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LEADING ABSTRACT
MATERIALS
MICROSTRUCTURE
MIS SOLAR CELLS
MOLECULAR BEAM EPITAXY
OPTICAL SYSTEMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
PROCEEDINGS
SAFETY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUPERCONDUCTORS
SURFACE COATING
TYPE-II SUPERCONDUCTORS
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LEADING ABSTRACT
MATERIALS
MICROSTRUCTURE
MIS SOLAR CELLS
MOLECULAR BEAM EPITAXY
OPTICAL SYSTEMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
PROCEEDINGS
SAFETY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUPERCONDUCTORS
SURFACE COATING
TYPE-II SUPERCONDUCTORS