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III-V heterostructures for electronic/photonic devices

Conference ·
OSTI ID:7023480
 [1];  [2];  [3]
  1. California Univ., San Diego, La Jolla, CA (USA)
  2. AT and T Bell Lab., Solid State Technology Center, Breinigsville, PA (US)
  3. California Univ., Santa Barbara, CA (USA)

The symposium presented in this book covered a wide range of epitaxial techniques important for III-V compound semiconductors. The topics range from fundamental growth kinetics and models to the production issues of safety and multiple wafers per run. In particular, the symposium held a special session on alternative sources, mainly the less-toxic non-hydride group-V sources. These are important for MOCVD and MOMBE. In terms of materials systems, the symposium covers both lattice-matched heterostructures, such as AlGaAs/GaAs and InGaAs/InP, pseudomorphic heterostructures, such as InGaAs/GaAs, and lattice-mismatched heterostructures, such as GaAs/Si, GaAs/InP, InP/GaAs, II-VI/GaAs, etc. In the characterization area, the techniques include RBS, TEM, X-ray, C-V, photoconductivity, Hall measurements, etc. In terms of device applications, the topics include MODFET, MESFET, laser, photodetector, solar cells, and integrated FET and laser, etc.

OSTI ID:
7023480
Report Number(s):
CONF-890426--; ISBN: 1-55899-018-6
Country of Publication:
United States
Language:
English

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