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Thin epitaxial silicon for dE/dx detectors

Conference ·
; ; ; ; ;

The techniques for fabricating thin self-supporting epitaxial films for dE/dx detectors have been studied. Detectors having thicknesses between 1 and 4 ..mu..m with areas of 12.5 mm/sup 2/ have been fabricated and tested. The response of the detectors has been studied with alpha particles, oxygen ions, and fission framents.

Research Organization:
Los Alamos Scientific Lab., N.Mex. (USA)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
7142200
Report Number(s):
LA-UR-76-2291; CONF-761006-12
Country of Publication:
United States
Language:
English

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Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLE DETECTION
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FABRICATION
ION DETECTION
MEASURING INSTRUMENTS
PERFORMANCE
PHYSICAL PROPERTIES
RADIATION DETECTION
RADIATION DETECTORS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SENSITIVITY
SI SEMICONDUCTOR DETECTORS
TELESCOPE COUNTERS
THICKNESS