Thin dE/dx detectors of uniform thickness made on epitaxial silicon

Journal Article · Sun Dec 31 23:00:00 EST 1972 · Nucl. Instrum. Methods, v. 112, no. 3, pp. 465-467

DOI:https://doi.org/10.1016/0029-554X(73)90163-8· OSTI ID:4367642

Ponpon, J P; Siffert, P; Vazeille, F

Anodic dissolution of the low resistivity N/sup +/ silicon substrate has been used to prepare dE/dx nuclear particle detectors on the remaining epitaxially grown high resistivity N film. Robust fully depleted counters with sensitive layers thinner than 5 mu m, with good uniformity can be made by this technique. Their characteristics are discussed. (auth)

• Research Organization: Univ. Louis Pasteur, Strasbourg
• Sponsoring Organization: USDOE
• NSA Number: NSA-29-007764
• OSTI ID: 4367642
• Journal Information: Nucl. Instrum. Methods, v. 112, no. 3, pp. 465-467, Journal Name: Nucl. Instrum. Methods, v. 112, no. 3, pp. 465-467; ISSN NUIMA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

*SI SEMICONDUCTOR DETECTORS-- FABRICATION
ETCHING
N46110* --Instrumentation--Radiation Detection Instruments-- General Detectors & Monitors
PERFORMANCE
SURFACE BARRIER DETECTORS