Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers

Conference · Thu May 13 04:00:00 EDT 1999

OSTI ID:7142

Biefeld, R M ^[1]; Kurtz, S R; Phillips, J D

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1. Sandia National Laboratories

We report on the metal-organic chemical vapor deposition (MOCVD) of mid- infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained, type 1, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 µm. We find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SLS, optically pumped laser structure was grown on an InAs substrate with AlAs_0.l6Sb_0.84 claddings. A lasing threshold and spectrally narrowed laser emission was seen from 80 K through 200 K, the maximum temperature where Iasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T₀ = 72 K, from 80 to 200 K.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7142
• Report Number(s): SAND99-0415C; ON: DE00007142
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
Chemical Vapor Deposition
Indium Antimonides
Indium Arsenides
Layers
Optical Pumping
Semiconductor Lasers
Strains