Exploring new active regions for type 1 InAsSb strained-layer lasers

Journal Article · Sat Jan 01 04:00:00 EST 2000 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-000-0101-9· OSTI ID:20015391

Biefeld, R M; Phillips, J D; Kurtz, S R

The authors report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and strained, type 1 InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, they have prepared structures with low temperature (< 20 K) photoluminescence wavelengths ranging from 3.4 {micro}m to 4.8 {micro}m. They find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data they have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SLS, optically pumped laser structure was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 K through 240 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 72 K, from 80 K to 200 K.

• Research Organization: Sandia National Labs., Albuquerque, NM (US)
• Sponsoring Organization: US Department of Energy
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 20015391
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 1 Vol. 29; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
ENERGY GAP
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE