Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers
We report on the metal-organic chemical vapor deposition (MOCVD) of mid- infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained, type 1, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 µm. We find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SLS, optically pumped laser structure was grown on an InAs substrate with AlAs0.l6Sb0.84 claddings. A lasing threshold and spectrally narrowed laser emission was seen from 80 K through 200 K, the maximum temperature where Iasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T0 = 72 K, from 80 to 200 K.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7142
- Report Number(s):
- SAND99-0415C; ON: DE00007142
- Resource Relation:
- Conference: 9th Biennial Workshop on Organometallic Vapor Phase Epitaxy; Ponte Vedra Beach, FL; 05/23-27/1999
- Country of Publication:
- United States
- Language:
- English
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