Studies of Au ohmic'' contacts to p -type Hg sub 1 minus x Cd sub x Te
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
- Department of Electrical Engineering, Stanford University, Stanford, California 94305 (USA)
- Texas Instruments Inc., Dallas, Texas 75265 (USA)
- Deptartment of Electrical Engineering, Stanford University, Stanford, California 94305 (USA)
Electroless Au contacts to {ital p}-type Hg{sub 1{minus}{ital x}}Cd{sub {ital x}}Te in many cases exhibit ohmic behavior. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior is due to the presence of a Te, O, and Cl layer. To test this hypothesis, thin plasma oxide layers were then used in evaporated Au contacts. Ohmic behavior was also observed for the annealed plasma oxidized contacts. We believe this ohmic behavior is primarily a result of the low interface state density at the interfacial layer/Hg{sub 1{minus}{ital x}}Cd{sub {ital x}}Te interface and in addition, a 100 {degree}C anneal promoted a further reduction in the interface state density and thus lowered the contact resistance. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.
- OSTI ID:
- 7141913
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:2; ISSN 0734-2101; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
CADMIUM COMPOUNDS
CHEMICAL REACTIONS
ELEMENTS
GOLD
HEAT TREATMENTS
INTERFACES
MATERIALS
MEASURING METHODS
MERCURY COMPOUNDS
METALS
OXIDATION
PLASMA
SAMPLE PREPARATION
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS
360603* -- Materials-- Properties
ANNEALING
CADMIUM COMPOUNDS
CHEMICAL REACTIONS
ELEMENTS
GOLD
HEAT TREATMENTS
INTERFACES
MATERIALS
MEASURING METHODS
MERCURY COMPOUNDS
METALS
OXIDATION
PLASMA
SAMPLE PREPARATION
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS