Effects of Al[sub 2]O[sub 3] cap on the structural and electrical properties of Au/Te/Au contacts on an [ital n]-type GaAs substrate

Journal Article · Mon Jun 07 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109168· OSTI ID:6484908

Lin, X W ^[1]; Piotrowska, A; Kaminska, E ^[2]; Liliental-Weber, Z; Washburn, J; Weber, E ^[3]

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1. Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)
3. Materials Science Division, Lawrence Berkeley Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

Au/Te/Au contacts to [ital n]-type GaAs were prepared by sequential vapor deposition and subsequently annealed at temperatures in the range 420--480 [degree]C. The structural and electrical characteristics of the contacts were characterized by transmission electron microscopy and current--voltage measurements. We found that the electrical behavior of the contacts depends dramatically on whether they are covered with an Al[sub 2]O[sub 3] cap during annealing. While a cap-annealed Au/Te/Au contact remains rectifying, annealing without the cap results in ohmic behavior. In conjunction with the observed structural properties, this phenomenon can be understood in terms of the doping model for ohmic contact formation.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6484908
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:23; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360606* -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
MATERIALS
MICROSCOPY
N-TYPE CONDUCTORS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY