Growth and characterization of Hg/sub l-x/Cd/sub x/Te photochemical native oxides

Journal Article · Thu Dec 01 04:00:00 EST 1988 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2095493· OSTI ID:6237612

Kao, T M; Sigmon, T W

The authors report results on the growth of Hg/sub 1-x/Cd/sub x/Te native oxides using ultraviolet radiation. This method provides a dry, clean, low-temperature process for growing native oxides on Hg/sub 1-x/Cd/sub x/Te. Measurements of the stoichiometry and thicknesses of these oxides are presented and possible growth mechanisms discussed. The stoichiometry of the oxide/Hg/sub 1-x/Cd/sub x/Te interface after annealing is examined with regard to the encapsulation properties of these layers. Preliminary results obtained for high-temperature photochemical oxidation are also reported.

• Research Organization: Hewlett-Packard Optoelectronics Div., San Jose, CA (US); Stanford Electronics Labs., Stanford, CA (US)
• OSTI ID: 6237612
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:12; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISTRY
CRYSTAL GROWTH METHODS
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
HIGH TEMPERATURE
INTERFACES
LOW TEMPERATURE
MERCURY
METALS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMISTRY
RADIATIONS
STOICHIOMETRY
TELLURIDES
TELLURIUM COMPOUNDS
THICKNESS
ULTRAVIOLET RADIATION