Studies of boron implantation through photochemically deposited SiO/sub 2/ films on Hg/sub 1-x/Cd/sub x/Te. Technical report
Technical Report
·
OSTI ID:6039186
Variable-temperature Hall and resistivity measurements were used to monitor the changes in carrier behavior in p-type Hg(1-x)Cd(x)Te when boron ions are implanted through photochemically deposited SiO/sub 2/. The formation of an n-type layer is demonstrated. Quantitative and nondestructive determination of the absolute /sup 10/B concentration and distribution were obtained by the novel method of neutron-depth profiling. As expected, the boron distributions in the SiO/sub 2/ films and Hg(1-x)Cd(x)Te are strongly dependent upon the ion implant energy. However, negligible changes in the boron depth profiles were found after 200 C anneals. The present results are briefly related to the performance behavior of mid-wavelength infrared (MWIR) sensors produced via generic ion-implantation procedures.
- Research Organization:
- Aerospace Corp., El Segundo, CA (USA). Chemistry and Physics Lab.
- OSTI ID:
- 6039186
- Report Number(s):
- AD-A-182437/4/XAB; TR-0086(6945-07)-3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BARYONS
BORON IONS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGED PARTICLES
DEPTH
DIMENSIONS
ELEMENTARY PARTICLES
FERMIONS
FILMS
HADRONS
HALL EFFECT
ION IMPLANTATION
IONS
LAYERS
MATERIALS TESTING
MERCURY COMPOUNDS
MERCURY TELLURIDES
NEUTRONS
NONDESTRUCTIVE TESTING
NUCLEONS
OXIDES
OXYGEN COMPOUNDS
PASSIVITY
SILICON COMPOUNDS
SILICON OXIDES
TELLURIDES
TELLURIUM COMPOUNDS
TESTING
360605* -- Materials-- Radiation Effects
BARYONS
BORON IONS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGED PARTICLES
DEPTH
DIMENSIONS
ELEMENTARY PARTICLES
FERMIONS
FILMS
HADRONS
HALL EFFECT
ION IMPLANTATION
IONS
LAYERS
MATERIALS TESTING
MERCURY COMPOUNDS
MERCURY TELLURIDES
NEUTRONS
NONDESTRUCTIVE TESTING
NUCLEONS
OXIDES
OXYGEN COMPOUNDS
PASSIVITY
SILICON COMPOUNDS
SILICON OXIDES
TELLURIDES
TELLURIUM COMPOUNDS
TESTING