Ion Implantation in Narrow-Gap Cd{sub x}Hg{sub 1–x}Te Solid Solutions
Journal Article
·
· Russian Physics Journal
The results of experimental studies of processes of the radiation defect formation under ion implantation of narrow-gap Cd{sub x}Hg{sub 1-x}Te solid solutions (MCT) are presented. The processes of formation of structural damages of the crystal and their effect on the electrophysical properties of ion-implanted bulk crystals and ptype heteroepitaxial structures grown by liquid-phase and molecular-beam epitaxy are considered. The results on the spatial distribution of implanted boron atoms and radiation donor centers in these materials are presented as a function of the mass, dose, and energy of ions being implanted and the implantation temperature. The processes and models of the formation of n{sup +}–n{sup -}–p-structures during boron ion implantation in p-type MCT and their experimental proof are considered.
- OSTI ID:
- 22869680
- Journal Information:
- Russian Physics Journal, Journal Name: Russian Physics Journal Journal Issue: 6 Vol. 61; ISSN RPJOEB; ISSN 1064-8887
- Country of Publication:
- United States
- Language:
- English
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