Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Native oxide encapsulation for annealing boron-implanted Hg(1-x)Cd(x)Te

Technical Report ·
OSTI ID:5529313
The use of Hg/sub 1-x/CdxTe(MCT) in infrared photovoltaic focal plane arrays would benefit considerably from a planar device fabrication process, such as is offered by ion implantation. Implantation would allow selective doping and eliminate the present mesa process used for these structures. However, the effect most often observed in implanted MCT is a radiation damage induced n electrical activity which results in junctions several times deeper than the atomic profile of the implanted impurity. This result causes difficulty in achieving precise control of the implanted junctions. Also, further heat treatments often used in processing are found to cause changes in the properties of this defect layer. In this work, we describe a native oxide encapsulation process capable of withstanding rapid thermal annealing (RTA) or long-time furnace annealing without Hg over pressure or loss from the substrate. We report for the first time electrical activation of implanted B along with implantation damage removal using this native oxide as an annealing encapsulant.
Research Organization:
Stanford Univ., CA (USA). Stanford Electronics Labs.
OSTI ID:
5529313
Report Number(s):
AD-A-185576/6/XAB
Country of Publication:
United States
Language:
English