AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact

Technical Report · Wed Sep 28 04:00:00 EDT 1994

DOI:https://doi.org/10.2172/71369· OSTI ID:71369

Ruehlicke, C ^[1]; Briere, M A; Schneider, D ^[1]

---

1. Lawrence Livermore National Lab., CA (United States)

Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 71369
• Report Number(s): UCRL-JC--118776; CONF-941129--24; ON: DE95011536
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BLISTERS
EXPERIMENTAL DATA
KRYPTON IONS
MULTICHARGED IONS
MUSCOVITE
PHYSICAL RADIATION EFFECTS
THORIUM IONS
URANIUM IONS
XENON IONS