Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions
- Field and Reaction, PREST, Japan Science and Technology Corporation (JST), Kawaguchi-shi, Saitama 332 (Japan)
- Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185 (Japan)
- Institute of Laser Science, University of Electro-Communications, Choufu-shi, Tokyo 182 (Japan)
- Faculty of Science, Tokyo Metropolitan University, Hachioji-shi, Tokyo 192-03 (Japan)
The defects produced on a graphite surface by single ion impact using highly charged Ar ions (charge state q{le}8) is investigated by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The defect looks like a protrusion in the STM image, while it is flat in the AFM image. From these two contrasting images, the defects are considered to be due to the increase in the local charge density of state at the surface caused by carbon atom sputtering. The average value for the defect size increases remarkably with the charge state of incident Ar ions. This is explained by the enhancement of potential sputtering due to the Coulomb repulsion between surface holes which are generated by the neutralization of highly charged Ar ions. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 550447
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and electronic properties of graphite and graphite intercalation compounds MC[sub 8] (M = K, Rb, Cs) governing their scanning tunneling microscopy images
AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact