AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact
Conference
·
OSTI ID:199715
- Lawrence Livermore National Lab. CA (United States)
Freshly cleaved surfaces of various types of muscovite mica were irradiated with few electron high Z ions (e.g. Kr{sup 35+}, Xe{sup 44+}, Xe{sup 50+}, U{sup 70+} and Tb{sup 74+}), using the LLNL EBIT 2 facility, with velocities of ca. 2-3 keV/{mu} and fluences of ca. 10{sup 9} ions/cm{sup 2}. Atomic force microscopy of the surfaces revealed the formation of hillocklike defects associated with single ion impact. The defects are {approximately} 10-70 nm in diameter with heights of 0.1-3 nm. A linear increase of the defect volume with incident charge state has been determined, as well as a threshold incident charge state for defect formation. This threshold is found to depend in second order on the nature of the incident ion and the type of mica target. These results indicate that atomic displacement is caused by mutual electrostatic repulsion of target atoms, ionized through potential electron emission, due to the approaching highly charged ion. An extension of the studies to different insulating materials is underway.
- OSTI ID:
- 199715
- Report Number(s):
- CONF-941129--
- Country of Publication:
- United States
- Language:
- English
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