Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7130912

Summers, G P ^[1]; Burke, E A; Shapiro, P; Messenger, S R ^[2]; Walters, R J ^[3]

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1. Naval Research Lab., Washington, DC (United States) Univ. of Maryland, Baltimore, MD (United States). Dept. of Physics
2. SFA, Inc., Landover, MD (United States)
3. Navel Research Lab., Washington, DC (United States)

The use of nonionizing energy loss (NIEL) in predicting the effect of gamma, electron and proton irradiations on Si, GaAs and InP devices is discussed. The NIEL for electrons and protons has been calculated from the displacement threshold to 200 MeV. Convoluting the electron NIEL with the slowed down'' Compton secondary electron spectrum gives an effective NIEL for Co[sup 60] gammas, enabling gamma-induced displacement damage to be correlated with particle results. The fluences of 1 MeV electrons equivalent to irradiation with 1 Mrad(Si) for Si, GaAs and InP are given. Analytic proton NIEL calculations and results derived from the Monte Carlo code TRIM agree exactly so long as straggling is not significant. The NIEL calculations are compared with experimental proton and electron damage coefficients using solar cells as examples. A linear relationship is found between the NIEL and proton damage coefficients for Si, GaAs and InP devices. For electrons, there appears to be a linear dependence for n-Si and n-GaAs, but for p-Si there is a quadratic relationship which decreases the damage coefficient at 1 MeV by a factor of [approximately]10 below the value for n-Si. The present results greatly extend the range of environments for which damage calculations based on NIEL can be applied. The NIEL results are presented in tabular form for ease of calculation.

• OSTI ID: 7130912
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GAMMA RADIATION
INDIUM PHOSPHIDE SOLAR CELLS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPACE FLIGHT
YEARS LIVING RADIOISOT