Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation
- Toyota Technological Institute, 2-12 Hisakata, Tempaku, Nagoya 468 (Japan)
- Naval Research Laboratory, Washington, DC 20375 (United States)
- NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
- Central Research Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)
The damage to diffused-junction n{sup +}-p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. {bold 40}, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 496647
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Space radiation effects in InP solar cells
Correlation of electron and proton irradiation-induced damage in InP solar cells
Proton damage on InGaAs solar cells having a 3 {micro}m InP window layer
Conference
·
Sat Nov 30 23:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5832447
Correlation of electron and proton irradiation-induced damage in InP solar cells
Conference
·
Sun Oct 01 00:00:00 EDT 1995
·
OSTI ID:177652
Proton damage on InGaAs solar cells having a 3 {micro}m InP window layer
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536219