Dynamics of rapid solidification in silicon

Conference · Mon Dec 01 04:00:00 EST 1986

OSTI ID:7128219

Peercy, P S; Thompson, M O; Tsao, J Y

Real-time techniques were used to study rapid melt and solidification dynamics in silicon. In crystalline Si, the interface response function was characterized and found to be asymmetric for large deviations from the melting temperature, which will require reevaluation of conventional transition state treatements of melt and solidification. In amorphous Si, the mechanism of explosive crystallization was studied. The explosive transformation is mediated by a buried liquid layer, and detailed measurements have led to the suggestion that polycrystalline Si nucleates at the moving liquid-amorphous interface. For certain conditions, this process could yield fine-grained polycrystalline SAi; for other conditions it permits epitaxial regrowth from the underlying crystalline Si for maximum melt thickness much less than the original amorphous layer thickness. 39 refs., 8 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7128219
• Report Number(s): SAND-86-1685C; CONF-861207-23; ON: DE87004245
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHANNELING
CRYSTALS
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
INFORMATION
ION CHANNELING
LASER RADIATION
MELTING
NUMERICAL DATA
PHASE TRANSFORMATIONS
POLYCRYSTALS
RADIATIONS
SEMIMETALS
SILICON
SOLIDIFICATION
TEMPERATURE DEPENDENCE
TIME DEPENDENCE