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Microprobe characterization of sputtered high T/sub c/ superconducting films on silicon

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:7127776
High T/sub c/ superconducting thin films on silicon substrates were prepared and characterized. Thin films were deposited by RF diode sputtering from a single compound target. Microprobe anlysis using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectrometry (EDXS) was used to characterize the structure and the composition. A severe interaction between the silicon substrate and the film was observed. A sputtered zirconium oxide film was studied as an interdiffusion barrier on the silicon substrate. The best film on Si with a ZrO/sub 2/ barrier layer has T/sub c/ (midpoint) = 88K and transition width = 8K with some tail.
Research Organization:
Textronix, Inc. Beaverton, OR 97077
OSTI ID:
7127776
Report Number(s):
CONF-871178-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 165:1
Country of Publication:
United States
Language:
English