High-speed distributed feedback lasers grown by hydride epitaxy

Journal Article · Mon Sep 26 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100043· OSTI ID:7126965

Temkin, H; Logan, R A; Karlicek, Jr, R F; Strege, K E; Blaha, J P; Gabla, P M; Savage, A; Oatis, K

We have used hydride vapor phase epitaxy to prepare re-entrant mesa buried-heterostructure distributed feedback lasers. The grating is overgrown uniformly with minimal amplitude reduction. A semi-insulating Fe-InP blocking layer around the etched mesas is grown very reproducibly with little dependence upon the details of mesa etching. Laser diodes show cw thresholds of approx.25 mA. Single-mode operation has been shown at power levels as high as 18 mW and temperatures up to 100 /sup 0/C. Modulation bandwidth in excess of approx.8 GHz has been demonstrated with simple and reliable full surface Ohmic contacts.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7126965
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING