1. 5-. mu. m GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures

Journal Article · Mon Feb 15 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339984· OSTI ID:5733955

Tsang, W T; Bowers, J E; Burkhardt, E G; Ditzenberger, J A; Wilt, D P; Dutta, N K; Napholtz, S G; Shen, T M; Twu, Y; Logan, R A; others, and

GaInAsP/InP double heterostructures grown by chemical-beam epitaxy have been used in conjunction with liquid-phase-epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5 ..mu..m. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to approx.10 mW/facet. The 3-dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, <-150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.

• Research Organization: ATandT Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5733955
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS