Gate oxide degradation caused by anomalous oxidation of BF[sub 2] ion implanted MoSi[sub 2] on polycrystalline silicon
- Seiko Epson Corp., Yamagata (Japan) Tohoku Epson Corp., Yamagata (Japan)
- Seiko Epson Corp., Nagano (Japan)
The dielectric strength of the gate oxide under a molybdenum polycide electrode (MoSi[sub 2] on polycrystalline silicon films) has been studied as a function of the fabrication processing steps of complementary metal oxide semiconductor very large scale integration. It was found that the thermal oxidation process step, after the source/drain formation using high dose BF[sub 2] ion implantation, thins the underlying polycrystalline silicon (poly-Si) of Mo polycide films and increase the degradation of thin gate SiO[sub 2] films in metal-on-oxide semiconductor capacitors. The effect of ion implantation on the oxidation behavior of Mo polycide films was compared with that of poly-Si films doped with phosphorus using a POCl[sub 3] source. An anomalous oxidation enhancement of Mo polycide films was observed when BF[sub 2] ions or BF[sub 2] and As ions are implanted into the Mo polycide films. This anomalous oxidation can cause gate oxide degradation.
- OSTI ID:
- 7126871
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:9; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC
BORON COMPOUNDS
BORON FLUORIDES
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CHEMICAL REACTIONS
ELECTRONIC CIRCUITS
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