The stability of MoSi{sub 2} films in vacuum and oxidizing atmospheres
- Rensselaer Polytechnic Institute, Troy, NY (United States). Materials Engineering Dept.
The stability of MoSi{sub 2} films with respect to mass loss at high temperature has been investigated in vacuum and dry air environments at temperatures up to 1,300 C. Samples were sputter deposited films of approximate composition MoSi{sub 3}, on sapphire substrates. Post heat treatment analysis indicated that the films recrystallized, and that phase separation of the excess silicon from the MoSi{sub 2} occurred early in the heating process. With continued heating, silicon was lost from the films by evaporation, leading to the conversion of the films to Mo{sub 5}Si{sub 3}. The rate of mass loss was much less in the air environment due to the formation of a SiO{sub 2} layer which served as a diffusion barrier to silicon. Evidence of a reaction along the MoSi{sub 2}/Al{sub 2}O{sub 3} interface was observed visually, but could not be detected chemically.
- OSTI ID:
- 94056
- Report Number(s):
- CONF-941144--; ISBN 1-55899-258-8
- Country of Publication:
- United States
- Language:
- English
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