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Phonon relaxation in soft-x-ray emission of insulators

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1]; ;  [2];  [3];  [4]
  1. University of Tennessee, Knoxville, Tennessee 37996 (United States)
  2. Tulane University, New Orleans, Louisiana 70118 (United States)
  3. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  4. Brookhaven National Laboratory, Upton, New York 11973 (United States)
Phonon-relaxation effects on the [ital L][sub 2,3] soft-x-ray emission of MgO, Al[sub 2]O[sub 3], and SiO[sub 2] are measured by comparing soft-x-ray emission spectra to photoelectron spectra. The observed shifts of the soft-x-ray emission spectra relative to the photoelectron spectra are identified as Stokes shifts and are described in terms of partial phonon relaxation. The observed Stokes shifts are 0.5, 0.9, and 1.2 eV for MgO, Al[sub 2]O[sub 3], and SiO[sub 2], respectively. Similar measurements on Mg, Al, and Si show no detectable Stokes shift within the experimental uncertainty of 0.2 eV. The larger Stokes shifts observed in the oxides are due to the longer core-hole lifetime, the faster phonon relaxation, and larger phonon relaxation energy in the oxides.
OSTI ID:
7122681
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:1; ISSN 0163-1829; ISSN PRBMDO
Country of Publication:
United States
Language:
English