Design and characterization of the BVX: An 8-channel CMOS preamplifier-shaper for silicon strips

Journal Article · Mon Jan 31 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.281522· OSTI ID:7113709

Britton, Jr, C L; Alley, G T; Simpson, M L ^[1]

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1. Oak Ridge National Lab., TN (United States); and others

This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of [+-]50 ns. The circuit has a pitch (width) of 85[mu]m/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 [mu]m p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7113709
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:1 Pt2; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
COMPARATIVE EVALUATIONS
DESIGN
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
EVALUATION
MEASURING INSTRUMENTS
PERFORMANCE
PULSE AMPLIFIERS
PULSE CIRCUITS
PULSE SHAPERS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS
SIGNAL CONDITIONERS