Design and characterization of the BVX: An 8-channel CMOS preamplifier-shaper for silicon strips

Conference · Thu Dec 31 04:00:00 EST 1992

OSTI ID:10107144

Britton, Jr, C L; Alley, G T; Simpson, M L; Wintenberg, A L ^[1]; Yarema, R J; Zimmerman, T ^[2]; Boissevain, J; Collier, W; Jacak, B V; Simon-Gillo, J; Sondheim, W; Sullivan, J P ^[3]; Lockyer, N ^[4]

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1. Oak Ridge National Lab., TN (United States)
2. Fermi National Accelerator Lab., Batavia, IL (United States)
3. Los Alamos National Lab., NM (United States)
4. Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Physics

This paper presents the design and characterization of an 8channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20pF. The nominal peaking time of the circuit is 200ns with an adjustment range of {plus_minus}50ns. The circuit has a pitch (width) of 84{mu}channel with a power dissipation of 1.2mW/channel and has been fabricated in 2{mu}m p-well CMOS. The 0pF noise is 330e with a noise slope of 64e/pF. The design approach is presented as well as both test bench and strip detector measurements.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10107144
• Report Number(s): FNAL/C--92/314; CONF-921005--5; ON: DE93003619
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000
440103
440104
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DESIGN
HIGH ENERGY PHYSICS INSTRUMENTATION
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NOISE
NUCLEAR SPECTROSCOPIC INSTRUMENTATION
PERFORMANCE TESTING
PREAMPLIFIERS
SI SEMICONDUCTOR DETECTORS