Low-noise CMOS preamplifier-shaper for silicon drift detectors

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:512999

Gramegna, G ^[1]; O`Connor, P; Rehak, P ^[2]; Hart, S ^[3]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Politecnico di Bari (Italy)
3. Wayne State Univ., Detroit, MI (United States)

We have designed a 16-channel preamplifier-shaper for particle tracking using silicon drift detectors (SDD). The preamplifier, which is optimized for a detector capacitance of 0.2 - 0.8 pF, uses two new circuit techniques to achieve a low noise (ENC 120 e- + 62 e-/pF), high linearity (< 0.5% to 50 fC), and good tolerance to process variations and temperature and power supply fluctuations. The circuit is continuously sensitive, has no digital signals on chip, and requires no external components or critical adjustments. The peaking time of the shaper is 50 nsec and the power dissipation, including an off-chip driver, is 6.5 mW/channel. The circuit is fabricated in 1.2 um CMOS and can accommodate detector leakage currents of up to 1.5 uA. Although the circuit was developed for use with particle tracking detectors, these techniques are also well-suited for the design of lower-noise preamplifiers for high-resolution X-ray spectroscopy systems.

• OSTI ID: 512999
• Report Number(s): CONF-961123--
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
43 PARTICLE ACCELERATORS
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DESIGN
MOSFET
PARTICLE TRACKS
PREAMPLIFIERS
READOUT SYSTEMS
SI SEMICONDUCTOR DETECTORS
X-RAY SPECTROSCOPY