Time and frequency response of the conventional avalanche photodiode

Journal Article · Wed Oct 01 04:00:00 EDT 1986 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1986.22701· OSTI ID:7111143

Teich, M C; Matsuo, K; Saleh, B E.A.

An analytical expression for the time course of the average impulse response function for a conventional avalanche photodiode is derived. Delta-function absorption of a single photocarrier and single-carrier-initiated/single-carrier multiplication conditions are assumed. The result is obtained as a limiting case of a previously derived equation for the staircase avalanche photodiode. The initial exponential growth for the curves is shown to represent electron and hole contributions arising from multiplication in the avalanche region whereas the subsequent exponential decay arises from residual holes transiting backward across the multiplication region. The associated frequency response function is obtained by Fourier transformation. The analytical results are shown be in good accord with average impulse response functions obtained by Riad and Hayes by means of simulation from the transport equations. The results should also apply to the channeling avalanche photodiode and to related structures in which the carriers are spatially separated and the multiplication is essentially single-carrier like.

• Research Organization: Center for Telecommunications Research, Dept. of Electrical Engineering, Columbia Univ., New York, NY 10027
• OSTI ID: 7111143
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-33:10; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ABSORPTION
ELECTRONS
ELEMENTARY PARTICLES
EQUATIONS
FERMIONS
FOURIER TRANSFORMATION
FREQUENCY RESPONSE TESTING
HOLES
INTEGRAL TRANSFORMATIONS
LEPTONS
PHOTODIODES
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
TIME RESOLUTION
TIMING PROPERTIES
TRANSFORMATIONS
TRANSPORT THEORY