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Effect of avalanche build-up time on avalanche photodiode sensitivity

Journal Article · · IEEE J. Quant. Electron.; (United States)
A calculation method for the receiver sensitivity of an avalanche photodiode is considered, taking into account avalanche build-up time and carrier transit time, in addition to the CR time constant. Actual receiver performance is estimated in a high data rate region of up to 10 Gbits/s for germanium avalanche photodiodes, applying the measured avalanche build-up time.
Research Organization:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Midoricho, Musashino-shi, Tokyo
OSTI ID:
5946243
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-21:3; ISSN IEJQA
Country of Publication:
United States
Language:
English

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