A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

Journal Article · Fri Jun 15 04:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607060206· OSTI ID:21088042

Gergel, V A ^[1]; Gontar', V M; Zimoglyad, V A; Tishin, Yu I ^[2]

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1. Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Russian Federation)
2. OOO Unique ICs (Russian Federation)

A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-{mu}m silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength {lambda} = 0.56 {mu}m in the irradiance range of 10{sup -3}-10{sup 2} lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high.

• OSTI ID: 21088042
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
PHOTODIODES
PHOTONS
QUANTUM EFFICIENCY
RELAXATION
SILICON
STEADY-STATE CONDITIONS
TOWNSEND DISCHARGE