A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode
- Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Russian Federation)
- OOO Unique ICs (Russian Federation)
A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-{mu}m silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength {lambda} = 0.56 {mu}m in the irradiance range of 10{sup -3}-10{sup 2} lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high.
- OSTI ID:
- 21088042
- Journal Information:
- Semiconductors, Vol. 41, Issue 6; Other Information: DOI: 10.1134/S1063782607060206; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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