Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes
Mathematical modeling methods were used to study the dynamics of micro-breakdown development in structures of silicon avalanche photodiodes. The constructed model considers the locality of the avalanchexs multiplication region appearing during single photon absorption and the delay of the avalanchexs current spreading over the rear electrode of the diode. The calculations showed two different phases of transient process of the formation of the electrical signal, i.e., the rapid and slow ones due to current spreading and ordinary RC recharge, respectively. The load resistances required to implement the pulsed mode of operation of the structures of the avalanche photodiode were calculated for a series of actual diode capacitances and spreading resistances of the rear electrode.
- OSTI ID:
- 21260320
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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