Modelling and fabrication of Geiger mode avalanche photodiodes
Journal Article
·
· IEEE Transactions on Nuclear Science
- Delft Univ. of Technology (Netherlands)
As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. The bias voltage and temperature dependence of the dark count rate is explained by a trap assisted tunneling model. Measured results on fabricated devices are compared with theory.
- OSTI ID:
- 624207
- Report Number(s):
- CONF-971147--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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