Lateral mode selection in semiconductor injection lasers

Journal Article · Fri Jul 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324086· OSTI ID:7110517

Wittke, J P; Ladany, I

Various methods have been used to control the lateral modes of injection lasers. We report on lateral mode selection in continuous-wave double-heterojunction lasers using the differential diffraction losses of different modes at a narrow reflector stripe on one emitting facet. Power output curves and far-field beam patterns scanned in the lateral (junction) plane are shown both before and after an antireflection coating was deposited on one facet except in a narrow stripe. The stripe defines the mode-selecting reflective region. Calculations, based on a simple model of DH injection lasers, are made by estimating the magnitude of the effect. Output powers of 12 mW from one facet were obtained.

• Research Organization: RCA Laboratories, Princeton, New Jersey 08540
• OSTI ID: 7110517
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
ELECTRIC DISCHARGES
ENERGY LEVELS
EXCITED STATES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASER CAVITIES
LASERS
OPERATION
OPTICAL MODES
OSCILLATION MODES
PERFORMANCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
VIBRATIONAL STATES