New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation

Journal Article · Mon Aug 01 04:00:00 EDT 1977 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1977.1069401· OSTI ID:5310400

Susaki, W; Tanaka, T; Kan, H; Ishii, M

Two new structures of lateral-injection transverse junction stripe (TJS) lasers, in which the stripe geometry is formed by the double heterojunctions, have been developed. These lasers, the homojunction type and the single-heterojunction type, have a self-reverse-biased p-n junction for concentrating current into the narrow active region. The temperature dependence of the threshold current has been very much improved in one of the new structures, the homojunction type, and is fair compared with those of good conventional broad-contact lasers. The threshold current does not increase rapidly up to 350/sup 0/K in the homojunction lasers. These lasers exhibit improved characteristics of low threshold, the single longitudinal mode oscillation as well as the single fundamental tranverse-mode oscillation, and ''kink-free'' behavior in the current dependence of the light-output power.

• Research Organization: Mitsubishi Electric Corp., Mizuhara, Japan
• OSTI ID: 5310400
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-13:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
DESIGN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS