Terraced-substrate GaAs- (GaAl)As injection lasers

Journal Article · Thu Feb 15 04:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90755· OSTI ID:6484210

Sugino, T; Wada, M; Shimizu, H; Itoh, K; Teramoto, I

A new structure of stripe-geometry lasers has been reported in which a double heterostructure is fabricated on a terraced substrate. Due to the lateral change of the effective refractive index along the junction plane, the optical gain distribution is restricted within a narrow stripe between two adjacent bends of the active layer regardless of the current spreading. This simple structure constantly exhibits a fundamental longitudinal mode oscillation as well as a single transverse-mode oscillation. No kinks have been observed in light-output-current characteristics. The linearity continues up to 10 times the threshold where the power output is 150 mW/facet.

• Research Organization: Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
• OSTI ID: 6484210
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
EFFICIENCY
EMISSION SPECTRA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
MICROSTRUCTURE
OPTICAL PROPERTIES
OSCILLATION MODES
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
SUBSTRATES