Semiconductor laser having fundamental lateral mode selectivity

Patent · Tue Jul 11 04:00:00 EDT 1978

OSTI ID:6599102

Wittke, J P

A semiconductor laser is described that has opposed end surfaces with an optical reflective means on the surface of at least one end surface that has a fundamental lateral mode selectivity. The laser has an optical waveguide that extends from one end surface to the other. The optical reflective means may be an electrical insulation layer on the end surface with a reflective stripe on the insulation layer and having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the reflective stripe. Alternatively, the selectivity means can be an antireflection layer on the end surface with a stripe opening in the antireflection layer having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the antireflection layer. The opening in the antireflection layer is formed by placing a wire close to the end surface and evaporating the antireflection material onto the end surface. The wire prevents the material from being deposited onto the end surface under the wire thereby forming the opening. Both the reflection stripe and stripe opening are positioned on that portion of the optical waveguide at the end surface having substantially the highest optical radiation intensity.

• Assignee: RCA Corp.
• Patent Number(s): US 4100508
• OSTI ID: 6599102
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
FABRICATION
LASERS
MODE SELECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS