Stripe-geometry double heterojunction laser element

Patent · Tue Aug 04 04:00:00 EDT 1981

OSTI ID:6064882

Ueno, M; Yonezu, H

In a double heterojunction semiconductor laser, extremely high optical power density emission is achieved by forming a stripe geometry exciting region in an active layer so as not to be exposed on the opposite reflective surfaces, and selecting a band gap of the stripe-geometry exciting region narrower than that of surrounding non-exciting region of the active layer. A pair of window regions formed between the respective reflective surfaces and the tip ends of the stripe-geometry exciting region are sandwiched between a pair of heterojunction interfaces and thus acting low loss optical waveguides. In addition, by providing an optical obstacle region in the vicinity of the window region, higher order modes in horizontal transverse mode oscillations are suppressed, and thereby extremely high optical power output at the fundamental mode can be obtained without causing catastrophic optical damage on the reflective surfaces.

• Assignee: Nippon Electric Co Ltd (Japan)
• Patent Number(s): US 4282494
• OSTI ID: 6064882
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
EMISSION
ENERGY-LEVEL TRANSITIONS
EXCITATION
JUNCTIONS
LASERS
OPTICAL PUMPING
OSCILLATIONS
PHOTOEMISSION
PUMPING
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
WAVEGUIDES