Use of the Epstein dielectric model to describe modes of planar stripe-geometry heterojunction lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1980 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1980v010n07ABEH010332· OSTI ID:6723169

Eliseev, P G; Osinski, M

The Epstein model of a dielectric layer having a smooth profile is used to describe the complex permittivity - in the plane of the active layer of the three-dimensional wave-guide structure in a planar stripe-geometry laser. A three-layer model generally suitable for a double heterostructure is used along the normal to the plane of the active layer. Aspects associated with the description of properties of hybrid modes are analyzed and solutions are obtained for a non-Gaussian angular distribution caused by bending of the wavefront under the influence of the Im - profile (in a waveguiding or ''antiwaveguiding'' structure). A comparison is made between the spontaneous emission intensity profiles in various types of planar stripe-geometry heterojunction lasers and the characteristic Im - profile in the assumed Epstein model. It is shown that the theoretical model can be applied to calculations of the mode profile in heterojunction lasers with stripe contact widths of approximately 15 ..mu...

• Research Organization: P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow
• OSTI ID: 6723169
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 10:7; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DISTRIBUTION
LASERS
PERMITTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPATIAL DISTRIBUTION
STRUCTURAL MODELS
WAVEGUIDES