Generalized Epstein model of stripe-geometry injection lasers
Journal Article
·
· Appl. Opt.; (United States)
A new rich family of complex permittivity profiles is obtained by introductn of additional parameters in the Burman and Gould procedure of generating the generalized Epstein profile. As an example of its possible applications, a model of planar-stripe injection lasers is developed. By proper choice of parameters the permittivity profile along the junction plane can be viewed in its central part without affecting its tails. Effects of interaction between the optical field and the charge carriers inside the stripe can thus be modeled. An analytical solution of the wave equation is given, and a number of examples of the near-field pattern for the fundamental lateral mode is calculated for (AlGa)As lasers by a self-consistent iterative technique. The influence of asymmetry of the permittivity on near-field shifts is demonstrated.
- Research Organization:
- Polish Academy of Sciences, Institute of Physics, ul. Michalowska 1, PL-26600 Radom, Poland
- OSTI ID:
- 6820305
- Journal Information:
- Appl. Opt.; (United States), Journal Name: Appl. Opt.; (United States) Vol. 23:1; ISSN APOPA
- Country of Publication:
- United States
- Language:
- English
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