Low-current proton-bombarded (GaAl)As double-heterostructure lasers

Journal Article · Tue Aug 15 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90358· OSTI ID:7094477

Bouley, J C; Delpech, P; Charil, J; Chaminant, G; Landreau, J; Noblanc, J P

Low-current cw stripe double-heterostructure (DH) lasers have been realized using a shallow proton-bombardment technique; unlike usual proton DH lasers they involve a resistive p (GaAl)As confinement layer and a rather highly doped GaAs active region both to reduce spreading current and stripe injected carrier outdiffusion. Threshold currents are on the order of 50 mA for a 12-..mu..m-wide by 200-..mu..m-long cavity.

• Research Organization: Centre National d'Etudes des Telecommunications, 196 rue de Paris, 92220 Bagneux, France
• OSTI ID: 7094477
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
DOPED MATERIALS
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IRRADIATION
JUNCTION DIODES
LASER CAVITIES
LASERS
MODULATION
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTON BEAMS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY