Characterization of cosputtered tungsten carbide thin films
Technical Report
·
OSTI ID:7091307
Polycrystalline thin films of W-C were deposited on single-crystal Si(111) or SiO/sub 2/ substrates by r.f. planar magnetron cosputtering of graphite and tungsten targets. The reaction of these W-C films in the presence or absence of an additional bonding layer of titanium with silicon or SiO/sub 2/ substrates was studied in the temperature range from 500 to 800 C by a combination of backscattering spectrometry, scanning electron microscopy, x-ray diffraction, and sheet-resistivity measurements. Films of composition W43C57 are of the cubic WC1-x phase and have a room temperature resistivity of 100 micro ohms cm. On thermal annealing for 30 min in vacuum on silicon substrates, they form blisters above 700 C. Films of composition W73C25 are of the hexagonal alpha W/sub 2/C phase and have a room-temperature resistivity of 140 micro ohms cm. On silicon substrates, they are thermally stable up to 800 C annealing. WSi/sub 2/ is observed only above 800 C annealing. The sheet resistance at room temperature of films of either composition on SiO/sub 2/ is unchanged after annealing up to 800 C.
- Research Organization:
- California Inst. of Tech., Pasadena (USA)
- OSTI ID:
- 7091307
- Report Number(s):
- AD-A-194704/3/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ANNEALING
BACKSCATTERING
BONDING
CARBIDES
CARBON
CARBON COMPOUNDS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTAL MINERALS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GRAPHITE
HEAT TREATMENTS
JOINING
LAYERS
MAGNETRONS
METALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NONMETALS
RADIATIONS
REFRACTORY METAL COMPOUNDS
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
SUBSTRATES
THERMAL RADIATION
THIN FILMS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ANNEALING
BACKSCATTERING
BONDING
CARBIDES
CARBON
CARBON COMPOUNDS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTAL MINERALS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GRAPHITE
HEAT TREATMENTS
JOINING
LAYERS
MAGNETRONS
METALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NONMETALS
RADIATIONS
REFRACTORY METAL COMPOUNDS
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
SUBSTRATES
THERMAL RADIATION
THIN FILMS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS