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Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.333804· OSTI ID:6216147
Amorphous films of Ni-W and Ni-N-W were deposited on single-crystal silicon with discharge gases of Ar or Ar+N/sub 2/ by rf cosputtering of Ni and W. The reaction of these Ni-W and Ni-N-W films with the Si substrate were studied in the temperature range of 450--750 /sup 0/C by a combination of backscattering spectrometry, x-ray diffraction, cross-sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni/sub 36/W/sub 64/ are stable below 500 /sup 0/C. NiSi and NiSi/sub 2/ form at 500 /sup 0/C, and WSi/sub 2/ forms rapidly in the temperature range of 625--650 /sup 0/C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi/sub 2/ and NiSi/sub 2/. The morphologies of the reacted layers are revealed by cross-sectional transmission electron microscopy. The crystallization temperature of amorphous Ni/sub 36/W/sub 64/ films on SiO/sub 2/ is near 650 /sup 0/C also. Adding nitrogen to form amorphous Ni/sub 30/N/sub 21/W/sub 49/ films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 /sup 0/C.
Research Organization:
California Institute of Technology, Pasadena, California 91125
OSTI ID:
6216147
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:10; ISSN JAPIA
Country of Publication:
United States
Language:
English