Investigation of cosputtered W--C thin films as diffusion barriers

Journal Article · Sun May 01 04:00:00 EDT 1988 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575301· OSTI ID:5132006

Yang, H Y; Zhao, X

Polycrystalline thin films of W--C were deposited on single-crystal <111>Si or SiO/sub 2/ substrates by rf planar magnetron cosputtering of graphite (C) and W targets. The performance of cosputtered W/sub 75/C/sub 25/ thin films as diffusion barriers between a <111>Si substrate and metallic overlayers of Ag, Au, or Al was investigated. Backscattering spectrometry and x-ray diffraction are used to detect metallurgical interactions. Four-point probe measurement of resistance is employed to monitor the electrical stability of the metallization schemes upon thermal annealing in a vacuum for 30 min in temperature ranges from 500 to 700 /sup 0/C. The electrical resistivity of W/sub 75/C/sub 25/ films is 140 ..mu cap omega.. cm. A W/sub 75/C/sub 25/ layer 1100 A thick prevents metallurgical interdiffusion and reaction between Au or Ag overlayers and the <111>Si substrates up to 700 /sup 0/C, and between an Al overlayer and the <111>Si substrate up to 450 /sup 0/C.tential

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5132006
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
&amp; Refractories-- Physical Properties
ALLOYS
ATOM TRANSPORT
CARBIDES
CARBON
CARBON COMPOUNDS
CHALCOGENIDES
DIFFUSION
DIFFUSION BARRIERS
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
FABRICATION
FILMS
GOLD
GRAPHITE
HIGH TEMPERATURE
METALS
MINERALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHYSICAL PROPERTIES
RADIATION TRANSPORT
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SILVER
SPUTTERING
STABILITY
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN ALLOYS
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS
VERY HIGH TEMPERATURE