Cosputtered W75C25 thin film diffusion barriers

Technical Report · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6934848

Yang, H Y; Zhao, X A; Nicolet, M A

The performance of cosputtered W75C25 thin films as diffusion barriers between an Si(111) substrate and metallic overlayers of silver, gold, or aluminum is investigated. Backscattering spectrometry and X-ray diffraction are used to detect metallurgical interactions, and four-point probe measurement of resistance is used to monitor the electrical stability of the metallization schemes upon thermal annealing in vacuum for 30 min at temperatures ranging from 500 to 700 C. It is found that the W75C25 layers prevents metallurgical interdiffusion and reaction between gold or silver overlayers and the Si(111) substrate up to 700 C, and between an aluminum overlayer and the Si(111) substrate up to 450 C. In addition, the W75C25 film as a diffusion barrier on GaAs was also investigated and found to be very effective metallurgically between silver overlayers and GaAs substrates for annealing up to 700 C.

• Research Organization: California Inst. of Tech., Pasadena (USA)
• OSTI ID: 6934848
• Report Number(s): AD-A-194575/7/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360603 -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
CARBIDES
CARBON COMPOUNDS
DIFFUSION BARRIERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERACTIONS
METALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFRACTORY METAL COMPOUNDS
SCATTERING
SILVER
SPUTTERING
STABILITY
SUBSTRATES
THERMAL RADIATION
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS