Effect of gamma irradiation on the low temperature properties of amphoterically si-doped GaAs LED's
The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76/sup 0/K have been studied in amphoterically Si-doped GaAs light-emitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, Phi, while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with Phi at constant voltage. This rapid decrease is due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with Phi at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the ''wavy band'' model for these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated life-times; that is, the longest lifetimes are least affected by gamma irradiation.
- Research Organization:
- Sandia Labs., Albuquerque, NM
- OSTI ID:
- 7090725
- Journal Information:
- J. Electrochem. Soc.; (United States), Vol. 124:12
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
LIGHT EMITTING DIODES
PHYSICAL RADIATION EFFECTS
CARRIER LIFETIME
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EMISSION SPECTRA
GALLIUM ARSENIDES
GAMMA RADIATION
RECOMBINATION
SPACE CHARGE
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
IONIZING RADIATIONS
LIFETIME
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems