Comment on ''Noncontact doping level determination in GaAs using photoreflectance spectroscopy'' (J. Appl. Phys. 62, 4558 (1987))

Journal Article · Sat Oct 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341293· OSTI ID:7089142

Bottka, N; Gaskill, D K

It is pointed out that it is inappropriate to use the third-derivative functional form derived by Aspnes (Surf. Sci. 37, 418 (1973)) to fit the photoreflectance data of GaAs at the fundamental absorption edge when the low-field condition is not satisfied. Instead, the Franz--Keldysh oscillations can be used to determine the carrier concentration of the material.

• Research Organization: Naval Research Laboratory, Washington, DC 20375
• OSTI ID: 7089142
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CRYSTAL DOPING
DATA ANALYSIS
ENERGY SPECTRA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
OPTICAL REFLECTION
PARAMETRIC ANALYSIS
PNICTIDES
REFLECTION
SEMICONDUCTOR MATERIALS
SPECTRA