Reply to ''Comment on 'Noncontact doping level determination in GaAs using photoreflectance spectroscopy' '' (J. Appl. Phys. 62, 4558 (1987))

Journal Article · Sat Oct 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341294· OSTI ID:7089130

Theis, W M; Peters, L; Phaneuf, L; Kapitan, L W

Compliance to the low electric field regime necessary for application of the third derivative functional form formalism is demonstrated for ion-implanted samples used to determine the doping level by photoreflectance spectroscopy. Due to field and doping inhomogeneity, the proper line shape is speculated to be described by a superposition of Franz--Keldysh oscillations.

• Research Organization: University Research Center, Wright State University, Dayton, Ohio 45435
• OSTI ID: 7089130
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Journal Issue: 8 Vol. 64:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CRYSTAL DOPING
DATA ANALYSIS
ENERGY SPECTRA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
OPTICAL REFLECTION
PARAMETRIC ANALYSIS
PNICTIDES
REFLECTION
SEMICONDUCTOR MATERIALS
SPECTRA