Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

Journal Article · Sun Jul 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618070023· OSTI ID:22749889

Avakyants, L. P.; Kazakov, I. P.; Bazalevsky, M. A. ^[1]; Deev, P. M.; Chervyakov, A. V. ^[2]

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1. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
2. Moscow State University, Faculty of Physics (Russian Federation)

The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (E{sub g}) and the transition between the conduction band and spin-orbit-split valence subband (E{sub g} + Δ{sub SO}) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations).

• OSTI ID: 22749889
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CHARGE STATES
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
SPECTRAL SHIFT
SPECTROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K